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2SD2153
Transistors
High gain amplifier transistor (25V, 2A)
2SD2153
!Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. !External dimensions (Units : mm)
4.0 1.0 2.5 0.5
1.5 0.4
(1)
3.0
0.5
(3)
4.5
1.6
(2)
(1) Base (2) Collector (3) Emitter
1.5 0.4
ROHM : MPT3 EIAJ : SC-62
!Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Single pulse, Pw=10ms
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 30 25 6 2 3 0.5 150 -55 +150
Unit V V V A(DC) A(Pulse) W C C
!Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces)
Denotes hFE
2SD2153 MPT3 UVW DN T100 1000
!Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
Measured using pulse current.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. 30 25 6 - - - 560 - -
Typ. - - - - - 0.12 - 110 22
Max. - - - 0.5 0.5 0.5 2700 - -
Unit V V V A A V - MHz pF IC = 50A IC = 1mA IE = 50A VCB = 20V VEB = 5V IC/IB = 1A/20mA
Conditions
0.4
VCE/IC = 6V/0.5A VCE = 10V , IE = -10mA , f= 100MHz VCB = 10V , IE = 0A , f = 1MHz
1.5
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